DMN4036LK3 document revision: 1 1 of 8 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMN4036LK3 40v n-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) i d t a = 25 c 40v 36m @ v gs = 10v 12.2a 61m @ v gs = 4.5v 9.4a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? backlighting ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? fast switching speed ? ?green? component and rohs compliant (note 1) mechanical data ? case: to252-3l ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 (note 1) ? moisture sensitivity: level 1 per j-std-020d ? terminals connections: see diagram ? terminals: matte tin finish annealed over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see below ? ordering information: see below ? weight: 0.33 grams (approximate) ordering information (note 1) product marking reel size (inches) tape width (mm) quantity per reel DMN4036LK3-13 n4036l 13 16 2,500 note: 1. diodes, inc. defines ?green? products as those which are eu rohs compliant and contain no halogens or antimony compoun ds; further information about diodes inc.?s ?green? policy can be found on our website. for packaging details, go to our website. marking information top view pin out -top view d s g equivalent circuit gs d d = manufacturer?s marking n4036l = product type marking code yyww = date code marking yy = year (ex: 09 = 2009) ww = week (01-52) yyww n4036l
DMN4036LK3 document revision: 1 2 of 8 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMN4036LK3 maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 40 v gate-source voltage v gs 20 v continuous drain current v gs = 10v (note 3) i d 12.2 a t a =70 c (note 3) 9.7 (note 2) 8.5 pulsed drain current v gs = 10v (note 4) i dm 31.7 a continuous source current (body diode) (note 3) i s 10.4 a pulsed source current (body diode) (note 4) i sm 31.7 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation linear derating factor (note 2) p d 4.12 33 w mw/ c (note 3) 8.49 67.9 (note 5) 2.12 16.9 thermal resistance, junction to ambient (note 2) r ja 30.3 c/w (note 3) 14.7 (note 5) 59.0 thermal resistance, junction to lead (note 6) r jl 3.1 operating and storage temperature range t j , t stg -55 to 150 c notes: 2. for a device surface mounted on 50mm x 50mm x 1.6mm fr4 pcb with high coverage of single sided 2oz copper, in still a ir conditions; the device is measured when operating in a steady-state condition. 3. same as note 2, except the device is measured at t 10 sec. 4. same as note 2, except the device is pulsed with d = 0.02 and pulse width 300 s. the pulse current is limited by the maxim um junction temperature. 5. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air cond itions; the device is measured when operating in a steady-state condition. 6. thermal resistance from junction to so lder-point (at the end of the drain lead).
DMN4036LK3 document revision: 1 3 of 8 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMN4036LK3 thermal characteristics 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 11 0 100m 1 10 11 0 100m 1 10 t amb =25c 25mm x 25mm 1oz fr4 r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area i d drain current (a) v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 50mm x 50mm 2oz fr4 25mm x 25mm 1oz fr4 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 5 10 15 20 25 30 35 t amb =25c 25mm x 25mm 1oz fr4 transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 25mm x 25mm 1oz fr4 50mm x 50mm 2oz fr4 safe operating area single pulse t amb =25c pulse power dissipation pulse width (s) max power dissipation (w) d=0.1 d=0.05 single pulse d=0.2 d=0.5 t amb =25c 50mm x 50mm 2oz fr4 transient thermal impedance pulse width (s) thermal resistance (c/w) t amb =25c 50mm x 50mm 2oz fr4 100s 1ms 10ms 100ms 1s dc r ds(on) limited v ds drain-source voltage (v) i d drain current (a)
DMN4036LK3 document revision: 1 4 of 8 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMN4036LK3 electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 40 ? ? v i d = 250 a, v gs = 0v zero gate voltage drain current i dss ? ? 0.5 a v ds = 40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) 1.0 ? 3.0 v i d = 250 a, v ds = v gs static drain-source on-resistance (note 7) r ds (on) ? ? 0.036 ? v gs = 10v, i d = 12a 0.061 v gs = 4.5v, i d = 6a forward transconductance (notes 7 & 8) g fs ? 19.6 ? s v ds = 15v, i d = 12a diode forward voltage (note 7) v sd ? 0.96 1.1 v i s = 12a, v gs = 0v reverse recovery time (note 8) t rr 112 ? ns i s = 12a, di/dt= 100a/ s reverse recovery charge (note 8) q rr ? 926 ? nc dynamic characteristics ( note 8 ) input capacitance c iss ? 453 ? pf v ds = 20v, v gs = 0v f= 1mhz output capacitance c oss ? 79.1 ? pf reverse transfer capacitance c rss ? 40.5 ? pf total gate charge q g ? 4.9 ? nc v gs = 4.5v v ds = 20v i d = 12a total gate charge q g ? 9.2 ? nc v gs = 10v gate-source charge q gs ? 1.7 ? nc gate-drain charge q gd ? 2.7 ? nc turn-on delay time (note 9) t d(on) ? 3.2 ? ns v dd = 20v, v gs = 10v i d = 12a, r g ? 6.0 turn-on rise time (note 9) t r ? 11.7 ? ns turn-off delay time (note 9) t d(off) ? 11.6 ? ns turn-off fall time (note 9) t f ? 9.5 ? ns notes: 7. measured under pulsed conditions. pulse width 300 s; duty cycle 2% 8. for design aid only, not subject to production testing. 9. switching characteristics are independent of operating junction temperatures.
DMN4036LK3 document revision: 1 5 of 8 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMN4036LK3 typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 12345 1e-3 0.01 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 0.01 0.1 1 10 4v 3.5v 10v 4.5v output characteristics t = 25c 3v v gs i d drain current (a) v ds drain-source voltage (v) 3.5v 10v 4v 2v 2.5v 3v output characteristics t = 150c v gs i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 12a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 10v 3.5v 4v 3v on-resistance v drain current t = 25c 4.5v v gs r ds(on) drain-source on-resistance ( ) i d drain current (a) vgs = 0v t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a)
DMN4036LK3 document revision: 1 6 of 8 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMN4036LK3 typical characteristics - continued 0.1 1 10 0 100 200 300 400 500 600 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 0246810 0 2 4 6 8 10 v ds = 20v i d = 12a gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) test circuits current regulator charge gate charge test circuit switching time test circuit basicgatechargewaveform switching time waveforms d.u.t 50k 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t v ds dd v r d r g v ds i d i g d(off)
DMN4036LK3 document revision: 1 7 of 8 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMN4036LK3 package outline dimensions dim inches millimeters dim inches millimeters min max min max min max min max a 0.086 0.094 2.18 2.39 e 0.090 bsc 2.29 bsc a1 - 0.005 - 0.127 h 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 l 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 l1 0.108 ref 2.74 ref b3 0.205 0.215 5.21 5.46 l2 0.020 bsc 0.508 bsc c 0.018 0.024 0.457 0.61 l3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 l4 0.025 0.040 0.635 1.016 d 0.213 0.245 5.41 6.22 l5 0.045 0.060 1.14 1.52 d1 0.205 - 5.21 - 1 0 10 0 10 e 0.250 0.265 6.35 6.73 ? 0 15 0 15 e1 0.170 - 4.32 - - - - - -
DMN4036LK3 document revision: 1 8 of 8 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMN4036LK3 suggested pad layout 5.8 0.228 1.6 0.063 6.2 0.244 3.0 0.118 6.17 0.243 2.58 0.101 mm inches important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes inco rporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability what soever in respect of any pr oducts purchased through unauthoriz ed sales channel. should customers purchase or use diodes in corporated products for any unintended or unauthorized application, customers shall i ndemnify and hold diodes incorporated and its representatives harmless agains t all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prop erly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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